T. E. Haynes

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix

René López, L. A. Boatner, T. E. Haynes et al. · Journal of Applied Physics · 2002 · 158 citations

Optical Materials, Engineering, Colloidal Nanocrystals +18

Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

Aditya Agarwal, T. E. Haynes, V. C. Venezia et al. · Applied Physics Letters · 1998 · 125 citations

Engineering, Gas Implants, Efficient Production +22

Study of the effect of ion implantation on the electrical and microstructural properties of tin-doped indium oxide thin films

Yuzo Shigesato, David C. Paine, T. E. Haynes · Journal of Applied Physics · 1993 · 120 citations

Engineering, Implant Dose, Ion Implantation +17

Temperature-controlled surface plasmon resonance in VO_2 nanorods

René López, T. E. Haynes, L. A. Boatner et al. · Optics Letters · 2002 · 99 citations

Materials Science, Plasmonics, Ion Implantation +15