P.A. Stolk

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 536 citations

Semiconductors, Engineering, Crystalline Defects +12

Modeling statistical dopant fluctuations in MOS transistors

P.A. Stolk, F. Widdershoven, D.B.M. Klaassen · IEEE Transactions on Electron Devices · 1998 · 406 citations

Device Modeling, Silicon Mosfet, Electrical Engineering +9

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Engineering, Silicon On Insulator, Defect Tolerance +17

Transient enhanced diffusion of boron in Si

Sachin Jain, Wim Schoenmaker, Richard Lindsay et al. · Journal of Applied Physics · 2002 · 233 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13