H.-J. Gossmann

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 536 citations

Semiconductors, Engineering, Crystalline Defects +12

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Lourdes Pelaz, M. Jaraı́z, George H. Gilmer et al. · Applied Physics Letters · 1997 · 216 citations

Engineering, B Atom, Silicon On Insulator +16

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann et al. · Applied Physics Letters · 1999 · 156 citations

Engineering, Silicon On Insulator, Silicene +17

Doping of Si thin films by low-temperature molecular beam epitaxy

H.-J. Gossmann, F. C. Unterwald, H. S. Luftman · Journal of Applied Physics · 1993 · 98 citations

Engineering, Junction Depths, Optoelectronic Devices +17

Reduction of transient diffusion from 1–5 keV Si+ ion implantation due to surface annihilation of interstitials

Aditya Agarwal, H.-J. Gossmann, D. J. Eaglesham et al. · Applied Physics Letters · 1997 · 85 citations

Engineering, Boron Doping Superlattices, Silicon On Insulator +16