M. Jaraı́z

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Engineering, Silicon On Insulator, Defect Tolerance +17

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Lourdes Pelaz, M. Jaraı́z, George H. Gilmer et al. · Applied Physics Letters · 1997 · 216 citations

Engineering, B Atom, Silicon On Insulator +16

Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

M. Jaraı́z, George H. Gilmer, J. M. Poate et al. · Applied Physics Letters · 1996 · 177 citations

Point Defect, Binary Collision Program, Ion Implantation +15

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann et al. · Applied Physics Letters · 1999 · 156 citations

Engineering, Silicon On Insulator, Silicene +17