M. Jaraı́z - Concepedia

Author

M. Jaraı́z

Also Known As

Jaraiz, Martin, Jaraiz, Martín, M Jaraiz, M Jaraı́z, M. Jaraiz, M. Jaraiz,, M. Jaraíz, M. Jaraíz, M. Jaraı́z, M.. Jaraiz

131

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

Universidad de Valladolid AT&T (United States)Lawrence Livermore National Laboratory Synopsys (United States)Philips (Netherlands)

About

M. Jaraı́z is an author at Universidad de Valladolid specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	32	2.5K
2	Applied Physics	21	32	2.5K
3	Natural Sciences	10	10	720
4	Chemistry	4	4	156
5	Biomedical Engineering	2	2	106

M. Jaraı́z

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, Journal of Applied Physics Materials ScienceSemiconductorsSi ImplantsIon ImplantationEngineering	1997	614
Energetics of Self-Interstitial Clusters in Si N. E. B. Cowern, Giovanni Mannino, P.A. Stolk, Physical Review Letters EngineeringSilicon On InsulatorDefect ToleranceCluster Formation EnergySilicene	1999	313
B diffusion and clustering in ion implanted Si: The role of B cluster precursors Lourdes Pelaz, M. Jaraı́z, George H. Gilmer, Applied Physics Letters EngineeringB AtomSilicon On InsulatorB DiffusionIon Implantation	1997	216
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena M. Jaraı́z, George H. Gilmer, J. M. Poate, Applied Physics Letters Point DefectBinary Collision ProgramIon ImplantationEngineeringMonte-carlo Modelling	1996	177
B cluster formation and dissolution in Si: A scenario based on atomistic modeling Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann, Applied Physics Letters EngineeringSilicon On InsulatorSiliceneMaterials ScienceMaterials Engineering	1999	156
Simulation of cluster evaporation and transient enhanced diffusion in silicon C.S. Rafferty, George H. Gilmer, M. Jaraı́z, Applied Physics Letters EngineeringImplant EnergySilicon On InsulatorMolecular DynamicsNanoscale Modeling	1996	151
Diffusion and interactions of point defects in silicon: molecular dynamics simulations George H. Gilmer, T. Dı́az de la Rubia, D. Stock, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials SciencePoint DefectsEngineeringPhysicsApplied Physics	1995	133
Carbon in silicon: Modeling of diffusion and clustering mechanisms R. Pinacho, P. Castrillo, M. Jaraı́z, Journal of Applied Physics EngineeringComputational ChemistryChemistryDefect ToleranceClustering Mechanisms	2002	81
Activation and deactivation of implanted B in Si Lourdes Pelaz, V. C. Venezia, H.-J. Gossmann, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsPhysicsB Clustering	1999	63
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+1” model Lourdes Pelaz, George H. Gilmer, M. Jaraı́z, Applied Physics Letters EngineeringIon ProcessIon ImplantationTransport PhenomenaAnomalous Diffusion	1998	58

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