Energetics of Self-Interstitial Clusters in Si

Abstract

The transient supersaturation in a system undergoing Ostwald ripening is related to the cluster formation energy ${E}_{\mathrm{fc}}$ as a function of cluster size $n$. We use this relation to study the energetics of self-interstitial clusters in Si. Measurements of transient enhanced diffusion of B in Si-implanted Si are used to determine $S(t)$, and inverse modeling is used to derive ${E}_{\mathrm{fc}}(n)$. For clusters with $n>15$, ${E}_{\mathrm{fc}}\ensuremath{\approx}0.8\mathrm{eV}$, close to the fault energy of ${113}$ defects. For clusters with $n<10$, ${E}_{\mathrm{fc}}$ is typically 0.5 eV higher, but stabler clusters exist at $n\ensuremath{\approx}4$ ( ${E}_{\mathrm{fc}}\ensuremath{\approx}1.0\mathrm{eV}$) and $n\ensuremath{\approx}8$ ( ${E}_{\mathrm{fc}}\ensuremath{\approx}0.6\mathrm{eV}$).