N. E. B. Cowern

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Engineering, Silicon On Insulator, Defect Tolerance +17

Impurity diffusion via an intermediate species: The B-Si system

N. E. B. Cowern, K.T.F. Janssen, G. F. A. van de Walle et al. · Physical Review Letters · 1990 · 165 citations

Electrical Engineering, Engineering, Diffusion Resistance +13

Diffusion of boron in germanium at 800–900°C

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2004 · 120 citations

Materials Science, B Diffusion, Ion Implantation +12

Diffusion of ion-implanted boron in germanium

Suresh Uppal, A. F. W. Willoughby, J. M. Bonar et al. · Journal of Applied Physics · 2001 · 111 citations

Materials Science, B Diffusion, Ion Implantation +11

Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions

Bartek Pawlak, R. Surdeanu, B. Colombeau et al. · Applied Physics Letters · 2004 · 104 citations

Engineering, Ge Preamorphization, Boron Deactivation +16