K.T.F. Janssen

Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos · Journal of Applied Physics · 1990 · 206 citations

Materials Science, B Diffusion, Electrical Engineering +15

Impurity diffusion via an intermediate species: The B-Si system

N. E. B. Cowern, K.T.F. Janssen, G. F. A. van de Walle et al. · Physical Review Letters · 1990 · 165 citations

Electrical Engineering, Engineering, Diffusion Resistance +13

Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation

V. Raineri, R.J. Schreutelkamp, F. W. Saris et al. · Applied Physics Letters · 1991 · 51 citations

Mev 29Si, Ion Implantation, Boron Diffusion +13

Channeling implantation of B and P in silicon

R.J. Schreutelkamp, V. Raineri, F.W. Sans et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 27 citations

Engineering, Nanoelectronics, Applied Physics +5

Deep implants by channeling implantation

R.J. Schreutelkamp, F.W. Saris, J.F.M. Westendorp et al. · Materials Science and Engineering B · 1989 · 27 citations

Tissue Engineering, Engineering, Medicine +5