G. F. A. van de Walle

Impurity diffusion via an intermediate species: The B-Si system

N. E. B. Cowern, K.T.F. Janssen, G. F. A. van de Walle et al. · Physical Review Letters · 1990 · 165 citations

Electrical Engineering, Engineering, Diffusion Resistance +13

Experiments on atomic-scale mechanisms of diffusion

N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn et al. · Physical Review Letters · 1991 · 134 citations

Crystalline Si, Engineering, Physics +14

Ge segregation at Si/Si1−<i>x</i>Ge<i>x</i> interfaces grown by molecular beam epitaxy

P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn et al. · Applied Physics Letters · 1989 · 114 citations

Materials Science, Semiconductors, Interface Quality +10

Mechanisms of implant damage annealing and transient enhanced diffusion in Si

N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm et al. · Applied Physics Letters · 1994 · 84 citations

Materials Engineering, Materials Science, Ion Collision Cascade +14

Reactions of point defects and dopant atoms in silicon

N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm et al. · Physical Review Letters · 1992 · 65 citations

Engineering, Point Defects, Silicon On Insulator +16