G. F. A. van de Walle

Impurity diffusion via an intermediate species: The B-Si system

N. E. B. Cowern, K.T.F. Janssen, G. F. A. van de Walle et al. · Physical Review Letters · 1990 · 165 citations

Engineering, Materials Engineering, Materials Science +15

Experiments on atomic-scale mechanisms of diffusion

N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn et al. · Physical Review Letters · 1991 · 135 citations

Natural Sciences, Materials Science, Physics +13

Ge segregation at Si/Si1−<i>x</i>Ge<i>x</i> interfaces grown by molecular beam epitaxy

P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn et al. · Applied Physics Letters · 1989 · 114 citations

Engineering, Materials Engineering, Materials Science +17

Mechanisms of implant damage annealing and transient enhanced diffusion in Si

N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm et al. · Applied Physics Letters · 1994 · 85 citations

Engineering, Materials Engineering, Materials Science +17

Reactions of point defects and dopant atoms in silicon

N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm et al. · Physical Review Letters · 1992 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17