P. C. Zalm

Diffusion in strained Si(Ge)

N. E. B. Cowern, P. C. Zalm, P. van der Sluis et al. · Physical Review Letters · 1994 · 244 citations

Materials Science, Materials Engineering, B Diffusion +14

Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions

P. C. Zalm · Journal of Applied Physics · 1983 · 178 citations

Engineering, Nuclear Physics, Ion Beam Instrumentation +18

Ultra shallow doping profiling with SIMS

P. C. Zalm · Reports on Progress in Physics · 1995 · 123 citations

Engineering, Vlsi Design, Chemistry +19

Ge segregation at Si/Si1−<i>x</i>Ge<i>x</i> interfaces grown by molecular beam epitaxy

P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn et al. · Applied Physics Letters · 1989 · 114 citations

Materials Science, Semiconductors, Interface Quality +10

Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K

P. C. Zalm, L. Beckers · Applied Physics Letters · 1982 · 110 citations

Electrical Engineering, Ion Implantation, Engineering +11