P. C. Zalm - Concepedia

Author

P. C. Zalm

Philips (Netherlands)

Also Known As

P C Zalm, P. C. ZALM, P. C. Zalm, P. Zalm, P.C. Zalm, Peer C. Zalm, Peer Zalm

106

Publications

2.7K

Citations

H-Index

110

Concepts

All Affiliations

Philips (Netherlands)NXP (Netherlands)Philips (Finland)Utrecht University Institute for Atomic and Molecular Physics

About

P. C. Zalm is an author at Philips (Netherlands) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	54	2.4K
2	Applied Physics	28	46	2.2K
3	Natural Sciences	13	15	716
4	Health Sciences	2	2	29
5	Biomedical Engineering	1	1	11

P. C. Zalm

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Diffusion in strained Si(Ge) N. E. B. Cowern, P. C. Zalm, P. van der Sluis, Physical Review Letters Materials ScienceMaterials EngineeringB DiffusionEngineeringDislocation Interaction	1994	244
Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions P. C. Zalm Journal of Applied Physics EngineeringNuclear PhysicsIon Beam InstrumentationVacuum DeviceSilicon On Insulator	1983	178
Ultra shallow doping profiling with SIMS P. C. Zalm Reports on Progress in Physics EngineeringVlsi DesignChemistryAnalytical ChemistryIon Beam	1995	123
Ge segregation at Si/Si1−<i>x</i>Ge<i>x</i> interfaces grown by molecular beam epitaxy P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn, Applied Physics Letters Materials ScienceSemiconductorsInterface QualityEngineeringPhysics	1989	114
Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K P. C. Zalm, L. Beckers Applied Physics Letters Electrical EngineeringIon ImplantationEngineeringCrystalline DefectsPhysics	1982	110
Large transient magnetic fields at high ion velocities in polarized iron J.L. Eberhardt, RT Horstman, P. C. Zalm, Hyperfine Interactions MagnetismFerromagnetismEngineeringPhysicsNatural Sciences	1977	86
Mechanisms of implant damage annealing and transient enhanced diffusion in Si N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, Applied Physics Letters Materials EngineeringMaterials ScienceIon Collision CascadeEngineeringDislocation Interaction	1994	84
Hydrogen solubility and network stability in amorphous silicon S. Acco, D. L. Williamson, P.A. Stolk, Physical review. B, Condensed matter Materials ScienceAmorphous Silicon LayersEngineeringCrystalline DefectsSolubility Limit	1996	82
Quantitative sputtering P. C. Zalm Surface and Interface Analysis Boundary ConditionsEngineeringIon‐bombardment Induced ErosionCivil EngineeringApplied Physics	1988	73
Reactions of point defects and dopant atoms in silicon N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, Physical Review Letters EngineeringPoint DefectsSilicon On InsulatorDefect ToleranceIon Implantation	1992	65

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