N. E. B. Cowern - Concepedia

Author

N. E. B. Cowern

Also Known As

Cowern, N. E. B., Cowern, N.E.B., Ghosh, B., N E B Cowern, N. Cowern, N. E. B. Cowern, N. E. B. cowern, N. E.B. Cowern, N.E.B Cowern, N.E.B. COWERN

135

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)University of Surrey Centre National de la Recherche Scientifique Laboratoire d'Analyse et d'Architecture des Systèmes Research Complex at Harwell

About

N. E. B. Cowern is an author at Philips (Netherlands) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	46	1.8K
2	Applied Physics	23	44	1.8K
3	Natural Sciences	9	9	190
4	Biomedical Engineering	1	1	18
5	Chemical Engineering	1	1	11

N. E. B. Cowern

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Diffusion in strained Si(Ge) N. E. B. Cowern, P. C. Zalm, P. van der Sluis, Physical Review Letters Materials ScienceMaterials EngineeringB DiffusionEngineeringDislocation Interaction	1994	244
Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos Journal of Applied Physics Materials ScienceB DiffusionElectrical EngineeringIon-implanted BEngineering	1990	206
Experiments on atomic-scale mechanisms of diffusion N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn, Physical Review Letters Crystalline SiEngineeringPhysicsDiffusion ResistanceIntrinsic Impurity	1991	134
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon C.J. Ortiz, P. Pichler, Tim Fühner, Journal of Applied Physics EngineeringSilicon On InsulatorDefect ToleranceMean-size EvolutionIon Implantation	2004	74
Boron uphill diffusion during ultrashallow junction formation Ray Duffy, V. C. Venezia, A. Heringa, Applied Physics Letters Electrical EngineeringIon ImplantationEngineeringSemiconductor DevicePhysics	2003	71
Reactions of point defects and dopant atoms in silicon N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm, Physical Review Letters EngineeringPoint DefectsSilicon On InsulatorDefect ToleranceIon Implantation	1992	65
Role of C and B clusters in transient diffusion of B in silicon N. E. B. Cowern, A. Cacciato, J. S. Custer, Applied Physics Letters Impurity AtomsVolume Compensation MechanismIon ImplantationCluster ScienceEngineering	1996	60
Interstitial traps and diffusion in epitaxial silicon films N. E. B. Cowern Applied Physics Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsSurface Science	1994	56
On the optimization of SiGe-base bipolar transistors R.J.E. Hueting, J.W. Slotboom, A. Pruijmboom, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringSige-base Bipolar TransistorsEngineeringVlsi Design	1996	54
Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon Giovanni Mannino, N. E. B. Cowern, F. Roozeboom, Applied Physics Letters Materials ScienceSemiconductor TechnologyEpitaxial GrowthEngineeringCrystalline Defects	2000	51

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