N. E. B. Cowern

Diffusion in strained Si(Ge)

N. E. B. Cowern, P. C. Zalm, P. van der Sluis et al. · Physical Review Letters · 1994 · 244 citations

Materials Science, Materials Engineering, B Diffusion +14

Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos · Journal of Applied Physics · 1990 · 206 citations

Materials Science, B Diffusion, Electrical Engineering +15

Experiments on atomic-scale mechanisms of diffusion

N. E. B. Cowern, G. F. A. van de Walle, D. J. Gravesteijn et al. · Physical Review Letters · 1991 · 134 citations

Crystalline Si, Engineering, Physics +14

A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

C.J. Ortiz, P. Pichler, Tim Fühner et al. · Journal of Applied Physics · 2004 · 74 citations · Full text

Engineering, Silicon On Insulator, Defect Tolerance +17

Boron uphill diffusion during ultrashallow junction formation

Ray Duffy, V. C. Venezia, A. Heringa et al. · Applied Physics Letters · 2003 · 71 citations

Electrical Engineering, Ion Implantation, Engineering +11