P. Pichler

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Mohan V. Jacob, P. Pichler, H. Ryssel et al. · Journal of Applied Physics · 1997 · 155 citations · Full text

Platinum Diffusion Experiments, Point Defects, Engineering +19

Simulation of critical IC fabrication processes using advanced physical and numerical methods

W. Jüngling, P. Pichler, S. Selberherr et al. · IEEE Transactions on Electron Devices · 1985 · 134 citations

Engineering, Material Simulation, Critical Ic Fabrication +22

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Viktoryia Uhnevionak, A. Burenkov, Christian Strenger et al. · IEEE Transactions on Electron Devices · 2015 · 84 citations · Full text

Device Modeling, Semiconductor Technology, Electrical Engineering +14

A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

C.J. Ortiz, P. Pichler, Tim Fühner et al. · Journal of Applied Physics · 2004 · 74 citations · Full text

Engineering, Silicon On Insulator, Defect Tolerance +17

Simulation of Critical IC-Fabrication Steps

P. Pichler, W. Jüngling, S. Selberherr et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1985 · 60 citations

Numerical Analysis, General Formulation, Engineering +22