P. Pichler - Concepedia

Author

P. Pichler

Fraunhofer Institute for Integrated Systems and Device Technology ORCID

Also Known As

P Pichler, P. Pichler, Peter Pichler, Pichler, P., Pichler, Peter

202

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Integrated Systems and Device Technology Schott (Germany)Friedrich-Alexander-Universität Erlangen-Nürnberg Centre National de la Recherche Scientifique Laboratoire d'Analyse et d'Architecture des Systèmes

About

P. Pichler is an author at Fraunhofer Institute for Integrated Systems and Device Technology specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	41	1.3K
2	Applied Physics	21	38	1.3K
3	Natural Sciences	7	7	277
4	Computer Engineering	2	2	84
5	Biomedical Engineering	1	1	18

P. Pichler

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments Mohan V. Jacob, P. Pichler, H. Ryssel, Journal of Applied Physics Platinum Diffusion ExperimentsPoint DefectsEngineeringSilicon On InsulatorDefect Tolerance	1997	155
Simulation of critical IC fabrication processes using advanced physical and numerical methods W. Jüngling, P. Pichler, S. Selberherr, IEEE Transactions on Electron Devices EngineeringMaterial SimulationCritical Ic FabricationComputational MechanicsIon Implantation	1985	134
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs Viktoryia Uhnevionak, A. Burenkov, Christian Strenger, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2015	84
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon C.J. Ortiz, P. Pichler, Tim Fühner, Journal of Applied Physics EngineeringSilicon On InsulatorDefect ToleranceMean-size EvolutionIon Implantation	2004	74
Simulation of Critical IC-Fabrication Steps P. Pichler, W. Jüngling, S. Selberherr, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Numerical AnalysisGeneral FormulationEngineeringComputer-aided DesignComputational Mechanics	1985	60
Vacancy-Assisted Oxygen Precipitation Phenomena in Si R. Falster, Marco Pagani, D. Gambaro, Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena EngineeringSurface ScienceApplied PhysicsVacuum DeviceSilicon On Insulator	1997	54
Advanced activation of ultra-shallow junctions using flash-assisted RTP W. Lerch, S. Paul, S. McCoy, Materials Science and Engineering B Electrical EngineeringAdvanced ActivationEngineeringTunneling MicroscopyNanoelectronics	2005	52
Determination of aluminum diffusion parameters in silicon O. Krause, H. Ryssel, P. Pichler Journal of Applied Physics Aluminium NitrideEngineeringSemiconductor DeviceSemiconductorsTransport Phenomena	2002	50
Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions B. Colombeau, Andrew J. Smith, N. E. B. Cowern, MRS Proceedings B DiffusionEngineeringTunneling MicroscopyPhysicsApplied Physics	2004	41
Radiation-enhanced diffusion during high-temperature ion implantation R. Schork, P. Pichler, Andreas Kluge, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Ion ImplantationEngineeringPhysicsApplied PhysicsRadiation-enhanced Diffusion	1991	36

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