IEEE Transactions on Electron Devices · 2015 · 89 citations · 16 references
EngineeringElectrical EngineeringPhysicsSemiconductor DevicesSemiconductor MaterialsTransport PhenomenaCarrier TransportCharge Carrier TransportDevice CharacterizationDopingElectron TransportSemiconductor PhysicsCarrier Mobility ModelingCarrier Transport In SemiconductorsCarrier Transport ModelingElectrical Transport PropertiesElectron ScatteringElectron Transport In SemiconductorsTemperature DependenceTransport In Semiconductors
The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.
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