John W. Palmour

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 538 citations

Engineering, Electrical Engineering, Materials Science +17

Status and prospects for SiC power MOSFETs

James A. Cooper, M. R. Melloch, Ranbir Singh et al. · IEEE Transactions on Electron Devices · 2002 · 498 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon carbide high-power devices

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 441 citations

Engineering, Electrical Engineering, Materials Science +17

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

R. F. Davis, G. Kelner, M. S. Shur et al. · Proceedings of the IEEE · 1991 · 407 citations

Engineering, Electrical Engineering, Materials Science +17