C.E. Weitzel

Silicon carbide high-power devices

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Transactions on Electron Devices · 1996 · 435 citations

Electrical Engineering, High Thermal Conductivity, Engineering +12

RF power amplifiers for wireless communications

C.E. Weitzel · 2003 · 434 citations

Wide Variety, Wireless Communications, Electrical Engineering +14

Device and Technology Evolution for Si-Based RF Integrated Circuits

Herbert S. Bennett, Ralf Brederlow, Júlio Costa et al. · IEEE Transactions on Electron Devices · 2005 · 124 citations

Device Feature Size, Electrical Engineering, Engineering +15

Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

B. J. Skromme, E. Luckowski, Karen Moore et al. · Journal of Electronic Materials · 2000 · 98 citations

Electrical Characteristics, Electrical Engineering, Barrier Height Nonuniformity +6

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz

C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Electron Device Letters · 1994 · 83 citations

Electrical Engineering, 4H-sic Substrates, Engineering +13