C.E. Weitzel - Concepedia

Author

C.E. Weitzel

Motorola (United States)

Also Known As

C. E. WEITZEL, C. E. Weitzel, C. Weitzel, C.E. Weitzel, Charles E. Weitzel, Charles Weitzel

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)Wolfspeed, Inc. (United States)RCA (United States)National Institute of Standards and Technology BAE Systems (United States)

About

C.E. Weitzel is an author at Motorola (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	1.6K
2	Electrical Engineering	16	20	1.5K
3	Applied Physics	12	14	873
4	Materials Science	3	3	41
5	Computer Engineering	2	2	135

C.E. Weitzel

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Silicon carbide high-power devices C.E. Weitzel, John W. Palmour, C.H. Carter, IEEE Transactions on Electron Devices Electrical EngineeringHigh Thermal ConductivityEngineeringPower DevicePower Devices	1996	435
RF power amplifiers for wireless communications C.E. Weitzel Wide VarietyWireless CommunicationsElectrical EngineeringEnergy HarvestingSemiconductor Devices	2003	434
Device and Technology Evolution for Si-Based RF Integrated Circuits Herbert S. Bennett, Ralf Brederlow, Júlio Costa, IEEE Transactions on Electron Devices Device Feature SizeElectrical EngineeringEngineeringRf SemiconductorRadio Frequency	2005	124
Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity B. J. Skromme, E. Luckowski, Karen Moore, Journal of Electronic Materials Electrical CharacteristicsElectrical EngineeringBarrier Height NonuniformityEngineeringApplied Physics	2000	98
4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz C.E. Weitzel, John W. Palmour, C.H. Carter, IEEE Electron Device Letters Electrical Engineering4H-sic SubstratesEngineeringDb GainRf Semiconductor	1994	83
4H-SiC MESFET with 65.7% power added efficiency at 850 MHz Karen Moore, C.E. Weitzel, Kevin J. Nordquist, IEEE Electron Device Letters Electrical EngineeringDrain BiasesEngineeringRf SemiconductorPower Device	1997	51
Comparison of SiC, GaAs, and Si RF MESFET power densities C.E. Weitzel IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1995	49
High Power and High Frequency Silicon Carbide Devices John W. Palmour, C. H. Carter, C.E. Weitzel, MRS Proceedings Electrical EngineeringEngineeringPower DeviceHigh PowerPower Semiconductor Device	1994	41
Silicon Carbide High Frequency Devices C.E. Weitzel Materials science forum Electrical EngineeringEngineeringApplied PhysicsMicroelectronicsCarbide	1998	39
RF power devices for wireless communications C.E. Weitzel Rf DevicesWireless CommunicationsEngineeringRadio FrequencyPower Electronics	2003	27

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