Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity

B. J. Skromme, E. Luckowski, Karen Moore, +4

Journal of Electronic Materials

Electrical CharacteristicsElectrical EngineeringBarrier Height NonuniformityEngineeringApplied Physics +4

Titanium and aluminum-titanium ohmic contacts to p-type SiC

J. Crofton, L.M. Beyer, John R. Williams, +3

Solid-State Electronics

Materials EngineeringMaterials ScienceEngineeringCeramic MaterialApplied Physics +2

Challenges for the integration of metal gate electrodes

J. Schaeffer, C. Capasso, L. R. C. Fonseca, +19

Materials ScienceElectrical EngineeringMetal Gate ElectrodesEngineeringElectromigration Technique +12

Etching of 6H‐SiC and 4H‐SiC using  NF 3 in a Reactive Ion Etching System

Jeff B. Casady, E. Luckowski, Michael J. Bozack, +3

Journal of The Electrochemical Society

Materials EngineeringMaterials ScienceElectrical EngineeringNf 3Aluminum Micromasking +10

Dual-metal gate CMOS with HfO/sub 2/ gate dielectric

S. Samavedam, L.B. La, James A. Smith, +23

Dual-metal IntegrationElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current +7

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

H.‐H. Tseng, C. Capasso, J. Schaeffer, +15

Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current +10

Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

E. Luckowski, J. M. DeLucca, John R. Williams, +4

Journal of Electronic Materials

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringOhmic Contact +7

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

S. Samavedam, L.B. La, Philip J. Tobin, +21

Semiconductor TechnologyElectrical EngineeringMetal/dielectric InterfaceEngineeringPhysics +13

Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

H.‐H. Tseng, P.J. Tobin, E.A. Hebert, +21

EngineeringVlsi DesignGate Stack DeviceEnhanced DeviceSemiconductor Device +15

Application of on-chip MIM decoupling capacitor for 90nm SOI microprocessor

D. Roberts, Walter Johnstone, H. Sanchez, +19

Low-power ElectronicsSystem On ChipElectrical EngineeringSoi TechnologyEngineering +10