L.B. La

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 165 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +18

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

J. Schaeffer, S. Samavedam, D. C. Gilmer et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 100 citations

Engineering, Electrical Properties, Gate Dielectric +18

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

D. C. Gilmer, R. I. Hegde, R. Cotton et al. · Applied Physics Letters · 2002 · 79 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 69 citations

Engineering, Various Pre-deposition Treatments, Silicon On Insulator +16

Dual-metal gate CMOS with HfO/sub 2/ gate dielectric

S. Samavedam, L.B. La, James A. Smith et al. · 2003 · 37 citations

Dual-metal Integration, Electrical Engineering, Engineering +9