L.B. La - Concepedia

Author

L.B. La

Motorola (United States)

Also Known As

L. B. La, L. La, L.-B. La, L.B. La, Le Boi La, Le La, Linh M. La

Publications

592

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)NOAA Physical Sciences Laboratory

About

L.B. La is an author at Motorola (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	562
2	Applied Physics	11	11	562
3	Electrical Engineering	10	10	493
4	Materials Engineering	5	5	342
5	Chemical Engineering	1	1	69

L.B. La

Publications

562

Citations

H-Index

Page 1

	Year	Citations
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2] Dina H. Triyoso, R. Liu, D. Roan, Journal of The Electrochemical Society Aluminium NitrideEngineeringThin Film Process TechnologyChemical DepositionGate Dielectric	2004	165
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics J. Schaeffer, S. Samavedam, D. C. Gilmer, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringElectrical PropertiesGate DielectricSemiconductor DeviceSemiconductors	2002	100
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics D. C. Gilmer, R. I. Hegde, R. Cotton, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering	2002	79
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringVarious Pre-deposition TreatmentsSilicon On InsulatorSemiconductor DeviceChemical Engineering	2004	69
Dual-metal gate CMOS with HfO/sub 2/ gate dielectric S. Samavedam, L.B. La, James A. Smith, Dual-metal IntegrationElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current	2003	37
PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology B. Maiti, Philip J. Tobin, Chris Hobbs, Electrical EngineeringEngineeringTin GateMicrofabricationNanoelectronics	2002	26
Compatibility of silicon gates with hafnium-based gate dielectrics D. C. Gilmer, R. I. Hegde, R. Cotton, Microelectronic Engineering Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsSilicon Gates	2003	24
Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs] S. Samavedam, L.B. La, Philip J. Tobin, Semiconductor TechnologyElectrical EngineeringMetal/dielectric InterfaceEngineeringPhysics	2004	20
Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics D. C. Gilmer, C. Hobbs, R. I. Hegde, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringNanoelectronics	2000	18
Strain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super-Critically Thick Strained Silicon Directly on Insulator (SC-SSOI) C. Mazuré, Ian Cayrefourcq, J. Mogab, Electrical EngineeringEngineeringAdvanced Packaging (Semiconductors)NanoelectronicsThick Ssoi	2006	13

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