D. C. Gilmer - Concepedia

Author

D. C. Gilmer

Also Known As

D C Gilmer, D. C. Gilmer, D. Gilmer, D.C. Gilmer, D. C. Gilmer, David C Gilmer, David C. Gilmer, David Gilmer, Gilmer, David

153

Publications

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)University of Modena and Reggio Emilia University of Minnesota Stanford University University at Albany, State University of New York

About

D. C. Gilmer is an author at Motorola (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	36	72	5.3K
2	Applied Physics	32	62	4.7K
3	Chemical Engineering	5	5	338
4	Social Sciences	1	1	35
5	Biomedical Engineering	1	1	35

D. C. Gilmer

Publications

5.6K

Citations

H-Index

Page 1

	Year	Citations
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling Stefano Larentis, F. Nardi, Simone Balatti, IEEE Transactions on Electron Devices Non-volatile MemoryElectrical EngineeringElectronic DevicesVoltage-driven Ion MigrationBipolar Rram—part Ii	2012	483
Metal oxide resistive memory switching mechanism based on conductive filament properties G. Bersuker, D. C. Gilmer, Dmitry Veksler, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringTunneling Microscopy	2011	468
MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics Stephen A. Campbell, D. C. Gilmer, Xiao‐Chuan Wang, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineering	1997	403
Titanium dioxide (TiO<sub>2</sub>)-based gate insulators Stephen A. Campbell, H.-S. Kim, D. C. Gilmer, IBM Journal of Research and Development SemiconductorsMaterials ScienceElectrical EngineeringEngineeringTitanium Dioxide	1999	247
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsNanoelectronicsPolysilicon/metal Oxide Interface	2004	224
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study F. Nardi, Stefano Larentis, Simone Balatti, IEEE Transactions on Electron Devices Non-volatile MemoryElectrical EngineeringVoltage-driven Ion MigrationEngineeringElectronic Memory	2012	196
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures Mario Lanza, K. Zhang, M. Porti, Applied Physics Letters Non-volatile MemoryEngineeringPreferential SitesPhase Change MemoryGrain Boundaries	2012	196
Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Simone Balatti, Stefano Larentis, D. C. Gilmer, Advanced Materials	2013	174
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2004	174
Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films C. James Taylor, D. C. Gilmer, Daniel G. Colombo, Journal of the American Chemical Society EngineeringTio2 Deposition KineticsOxidation ResistanceKinetic EffectsChemistry	1999	145

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