D. C. Gilmer

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Stefano Larentis, F. Nardi, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 483 citations

Non-volatile Memory, Electrical Engineering, Electronic Devices +14

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 468 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

Stephen A. Campbell, D. C. Gilmer, Xiao‐Chuan Wang et al. · IEEE Transactions on Electron Devices · 1997 · 403 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Titanium dioxide (TiO₂)-based gate insulators

Stephen A. Campbell, H.-S. Kim, D. C. Gilmer et al. · IBM Journal of Research and Development · 1999 · 247 citations

Semiconductors, Materials Science, Electrical Engineering +15

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik et al. · IEEE Transactions on Electron Devices · 2004 · 224 citations

Electrical Engineering, Engineering, Physics +13