Simone Balatti

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Stefano Larentis, F. Nardi, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 483 citations

Non-volatile Memory, Electrical Engineering, Electronic Devices +14

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Stefano Ambrogio, Simone Balatti, Valerio Milo et al. · IEEE Transactions on Electron Devices · 2016 · 247 citations · Full text

One-transistor-one-resistor Synapses, Engineering, Phase Change Memory +18

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability

Stefano Ambrogio, Simone Balatti, Antonio Cubeta et al. · IEEE Transactions on Electron Devices · 2014 · 218 citations · Full text

Reset State, Electrical Engineering, Non-volatile Memory +11

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

F. Nardi, Stefano Larentis, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 196 citations

Non-volatile Memory, Electrical Engineering, Voltage-driven Ion Migration +14

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Simone Balatti, Stefano Larentis, D. C. Gilmer et al. · Advanced Materials · 2013 · 174 citations · Full text