Simone Balatti

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

Stefano Larentis, F. Nardi, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 485 citations

Engineering, Electrical Engineering, Materials Science +17

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Stefano Ambrogio, Simone Balatti, Valerio Milo et al. · IEEE Transactions on Electron Devices · 2016 · 252 citations · Full text

Life Sciences, Electrical Engineering, Materials Science +17

Statistical Fluctuations in HfO<sub><italic><bold>x</bold></italic></sub> Resistive-Switching Memory: Part I - Set/Reset Variability

Stefano Ambrogio, Simone Balatti, Antonio Cubeta et al. · IEEE Transactions on Electron Devices · 2014 · 220 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

F. Nardi, Stefano Larentis, Simone Balatti et al. · IEEE Transactions on Electron Devices · 2012 · 199 citations

Engineering, Electrical Engineering, Materials Science +17

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Simone Balatti, Stefano Larentis, D. C. Gilmer et al. · Advanced Materials · 2013 · 174 citations · Full text

Engineering, Materials Engineering, Materials Science +13