G. Bersuker

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 468 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Jacob Gavartin, David Muñoz Ramo, Alexander L. Shluger et al. · Applied Physics Letters · 2006 · 339 citations · Full text

Engineering, Periodic Supercell, Chemistry +18

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Luca Vandelli, Andrea Padovani, Luca Larcher et al. · IEEE Transactions on Electron Devices · 2011 · 256 citations · Full text

Device Modeling, Electrical Engineering, Engineering +15

Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching

Andrea Padovani, Luca Larcher, Onofrio Pirrotta et al. · IEEE Transactions on Electron Devices · 2015 · 209 citations · Full text

Materials Science, Electrical Engineering, Dielectric Thickness +15

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Mario Lanza, K. Zhang, M. Porti et al. · Applied Physics Letters · 2012 · 196 citations · Full text

Non-volatile Memory, Engineering, Preferential Sites +22