G. Bersuker

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 470 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

Jacob Gavartin, David Muñoz Ramo, Alexander L. Shluger et al. · Applied Physics Letters · 2006 · 344 citations · Full text

Natural Sciences, Materials Science, Physics +12

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Luca Vandelli, Andrea Padovani, Luca Larcher et al. · IEEE Transactions on Electron Devices · 2011 · 260 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching

Andrea Padovani, Luca Larcher, Onofrio Pirrotta et al. · IEEE Transactions on Electron Devices · 2015 · 213 citations · Full text

Natural Sciences, Materials Science, Physics +17

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Mario Lanza, K. Zhang, M. Porti et al. · Applied Physics Letters · 2012 · 197 citations · Full text

Natural Sciences, Materials Science, Physics +17