Luca Vandelli

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 468 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks

Luca Vandelli, Andrea Padovani, Luca Larcher et al. · IEEE Transactions on Electron Devices · 2011 · 256 citations · Full text

Device Modeling, Electrical Engineering, Engineering +15

Microscopic Modeling of HfO<sub><italic>x</italic></sub> RRAM Operations: From Forming to Switching

Andrea Padovani, Luca Larcher, Onofrio Pirrotta et al. · IEEE Transactions on Electron Devices · 2015 · 209 citations · Full text

Materials Science, Electrical Engineering, Dielectric Thickness +15

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, Luca Vandelli et al. · Solid-State Electronics · 2011 · 143 citations · Full text

Engineering, Physics, Applied Physics +6

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

G. Bersuker, D. C. Gilmer, Dekel Veksler et al. · 2010 · 121 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15