J. Yum

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, Luca Vandelli et al. · Solid-State Electronics · 2011 · 143 citations · Full text

Engineering, Physics, Applied Physics +6

Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

G. Bersuker, D. C. Gilmer, Dekel Veksler et al. · 2010 · 121 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Injo Ok, H. Kim, M. Zhang et al. · Applied Physics Letters · 2008 · 53 citations

Electrical Engineering, Material Characteristics, Engineering +8

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

J. Yum, T. Akyol, Ming Lei et al. · Journal of Applied Physics · 2011 · 46 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>∼5nm) formed with molecular monolayer doping technique

K.-W. Ang, Joel Barnett, W.Y. Loh et al. · 2011 · 46 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14