300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>∼5nm) formed with molecular monolayer doping technique

Abstract

We demonstrate for the first time, a 20nm FinFET using a new, conformal, and damage-free monolayer doping technique. Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable an ultra-shallow (X <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> ~5nm) and abrupt (0.6nm/dec) junction formation around a high aspect ratio fin structure, which overcomes the possible FinFET pitch scaling limitations of traditional doping techniques. FinFETs featuring MLD junctions were successfully demonstrated with good electrostatics control down to a gate length of ~40nm. With further scaling of the fin width, sub-threshold swing and threshold voltage roll-off can be further improved. This low damage and conformal doping is a promising technique to address key FinFET scaling issues associated with parasitic series resistance and short channel control for the 15nm node and beyond.