P. Y. Hung

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Engineering, X-ray Reflectivity, Thin Film Process Technology +20

Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized model

J. Price, P. Y. Hung, Todd Rhoad et al. · Applied Physics Letters · 2004 · 87 citations

Optical Materials, Engineering, Microscopy +21

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Dawei Heh, Chadwin D. Young, George Brown et al. · Applied Physics Letters · 2006 · 76 citations

Sio2∕hfo2 Gate Stacks, Spatial Profile, Pattern Formation +15

Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Dawei Heh, Chadwin D. Young, George Brown et al. · IEEE Transactions on Electron Devices · 2007 · 65 citations

Electrical Engineering, Engineering, Physics +11

Increasing permittivity in HfZrO thin films by surface manipulation

T. S. Böscke, P. Y. Hung, P. D. Kirsch et al. · Applied Physics Letters · 2009 · 64 citations

Engineering, Thin Film Process Technology, Chemistry +17