Dawei Heh

Pulsed $I_{d}$– $V_{g}$ Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

Chadwin D. Young, Yuegang Zhao, Dawei Heh et al. · IEEE Transactions on Electron Devices · 2009 · 76 citations

Engineering, Electrical Engineering, Physics +10

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Dawei Heh, Chadwin D. Young, P. Y. Hung et al. · Applied Physics Letters · 2006 · 76 citations

Engineering, Electrical Engineering, Materials Science +17

Electron Trap Generation in High-<tex>$kappa$</tex>Gate Stacks by Constant Voltage Stress

Chadwin D. Young, Dawei Heh, S. Nadkarni et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 75 citations

Engineering, Electrical Engineering, Materials Science +16

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric

G. Bersuker, Dawei Heh, Chadwin D. Young et al. · 2008 · 74 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

Dawei Heh, Chadwin D. Young, George Brown et al. · IEEE Transactions on Electron Devices · 2007 · 65 citations

Engineering, Electrical Engineering, Microelectronics +14