S. Nadkarni

Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

G. Bersuker, J.H. Sim, Chang Seo Park et al. · IEEE Transactions on Device and Materials Reliability · 2007 · 142 citations

Gate Stacks, Electrical Engineering, Semiconductor Device +14

Electron Trap Generation in High-<tex>$kappa$</tex>Gate Stacks by Constant Voltage Stress

Chadwin D. Young, Dawei Heh, S. Nadkarni et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 75 citations

Materials Engineering, Electrical Engineering, Trap Depth Profiling +14

Intrinsic Threshold Voltage Instability of the HFO2 NMOS Transistors

G. Bersuker, Johnny Sim, C. Park et al. · 2006 · 40 citations

Electrical Engineering, Engineering, Physics +13

Organic Complementary D Flip-Flops Enabled by Perylene Diimides and Pentacene

Byungwook Yoo, A. Madgavkar, Brian Jones et al. · IEEE Electron Device Letters · 2006 · 39 citations

Materials Science, Organic Material Chemistry, Chemical Engineering +15

Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Debarshi Basu, Liang Wang, Lawrence Dunn et al. · Applied Physics Letters · 2006 · 20 citations

Engineering, Charge Carriers, Charge Transport +18