Johnny Sim

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

B.H. Lee, Chadwin D. Young, Rino Choi et al. · 2005 · 54 citations

Engineering, Power Electronics, Charge Transport +18

Intrinsic Threshold Voltage Instability of the HFO2 NMOS Transistors

G. Bersuker, Johnny Sim, C. Park et al. · 2006 · 40 citations

Electrical Engineering, Engineering, Physics +13

Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process

Zhibo Zhang, S. C. Song, C. Huffman et al. · Electrochemical and Solid-State Letters · 2005 · 39 citations

Materials Science, Electrical Engineering, Engineering +14

Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO/sub 2/ gate dielectric

Z.B. Zhang, Sook‐Keun Song, C. Huffman et al. · 2005 · 25 citations

Electrical Engineering, Gate Electrodes, Engineering +14

Electrical observation of deep traps in high-/spl kappa//metal gate stack transistors

H. R. Harris, Rino Choi, Johnny Sim et al. · IEEE Electron Device Letters · 2005 · 18 citations

Electrical Engineering, Engineering, Physics +13