Chadwin D. Young

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Si Joon Kim, Dushyant Narayan, Jae‐Gil Lee et al. · Applied Physics Letters · 2017 · 298 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Si Joon Kim, Jaidah Mohan, Jaebeom Lee et al. · Applied Physics Letters · 2018 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +17

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, Joel Barnett et al. · Journal of Applied Physics · 2006 · 152 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

G. Bersuker, J.H. Sim, Chang Seo Park et al. · IEEE Transactions on Device and Materials Reliability · 2007 · 144 citations

Engineering, Electrical Engineering, Materials Science +17