Joel Barnett

The effect of interfacial layer properties on the performance of Hf-based gate stack devices

G. Bersuker, C. S. Park, Joel Barnett et al. · Journal of Applied Physics · 2006 · 151 citations

Materials Science, Electrical Engineering, Semiconductor Device +15

Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility

P. D. Kirsch, Manuel Quevedo-López, H. -J. Li et al. · Journal of Applied Physics · 2006 · 118 citations

Engineering, X-ray Reflectivity, Thin Film Process Technology +20

Imaging local electronic corrugations and doped regions in graphene

Brian J. Schultz, Christopher J. Patridge, Vincent Lee et al. · Nature Communications · 2011 · 115 citations · Full text

Graphene Nanomeshes, Engineering, Applied Physics +3

Electron Trap Generation in High-<tex>$kappa$</tex>Gate Stacks by Constant Voltage Stress

Chadwin D. Young, Dawei Heh, S. Nadkarni et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 75 citations

Materials Engineering, Electrical Engineering, Trap Depth Profiling +14

Interfacial Layer-Induced Mobility Degradation in High-<i>k</i>Transistors

G. Bersuker, Joel Barnett, N. Moumen et al. · Japanese Journal of Applied Physics · 2004 · 74 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13