P. Sivasubramani

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 177 citations

Device Modeling, Electrical Engineering, Interface Dipole Model +11

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

S. Govindarajan, T. S. Böscke, P. Sivasubramani et al. · Applied Physics Letters · 2007 · 124 citations

Materials Science, Pure Hfo2, Electrical Engineering +11

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani, M. J. Kim, Bruce E. Gnade et al. · Applied Physics Letters · 2005 · 65 citations

Materials Science, Direct Contact, Material Analysis +15

Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

P. Sivasubramani, T. S. Böscke, Jiping Huang et al. · 2007 · 61 citations

Device Modeling, Electrical Engineering, Engineering +10

Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon

L. F. Edge, Darrell G. Schlom, P. Sivasubramani et al. · Applied Physics Letters · 2006 · 57 citations

Materials Science, Molecular-beam Deposition, Electrical Engineering +15