S. Govindarajan

Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

S. Govindarajan, T. S. Böscke, P. Sivasubramani et al. · Applied Physics Letters · 2007 · 124 citations

Materials Science, Pure Hfo2, Electrical Engineering +11

Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

T. S. Böscke, S. Govindarajan, P. D. Kirsch et al. · Applied Physics Letters · 2007 · 69 citations

Engineering, Stable Metal-insulator-metal Capacitors, Chemistry +16

Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics

P. Sivasubramani, T. S. Böscke, Jiping Huang et al. · 2007 · 61 citations

Device Modeling, Electrical Engineering, Engineering +10

Synthesis of molybdenum disilicide on molybdenum substrates

S. Govindarajan, Brajendra Mishra, D.L. Olson et al. · Surface and Coatings Technology · 1995 · 30 citations

Materials Engineering, Inorganic Chemistry, Engineering +4

Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

T. S. Böscke, S. Govindarajan, Christian Fachmann et al. · 2006 · 23 citations

Engineering, Phase Change Memory, Semiconductor Device +17