J.H. Sim

Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks

G. Bersuker, J.H. Sim, Chang Seo Park et al. · IEEE Transactions on Device and Materials Reliability · 2007 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

Dual work function metal gates using full nickel silicidation of doped poly-Si

J.H. Sim, H.C. Wen, J.P. Lu et al. · IEEE Electron Device Letters · 2003 · 71 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of ALD HfO2 thickness on charge trapping and mobility

J.H. Sim, Sook‐Keun Song, P. D. Kirsch et al. · Microelectronic Engineering · 2005 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +14

Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices

Chadwin D. Young, Yuegang Zhao, Michael Pendley et al. · Japanese Journal of Applied Physics · 2005 · 53 citations

Engineering, Electrical Engineering, Physics +13

Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode

Chang‐Hwan Choi, Se Jong Rhee, T.S. Jeon et al. · 2003 · 50 citations

Engineering, Electrical Engineering, Materials Science +17