H.C. Wen

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 177 citations

Device Modeling, Electrical Engineering, Interface Dipole Model +11

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Manuel Quevedo-López, H.C. Wen et al. · Applied Physics Letters · 2006 · 104 citations

Materials Science, Materials Engineering, Electrical Engineering +15

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, N. Goel, P. Majhi et al. · Applied Physics Letters · 2008 · 72 citations

Thick Zro2, Engineering, Low Frequency Dispersion +18

Dual work function metal gates using full nickel silicidation of doped poly-Si

J.H. Sim, H.C. Wen, J.P. Lu et al. · IEEE Electron Device Letters · 2003 · 71 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers

J. Liu, H.C. Wen, J.P. Lu et al. · IEEE Electron Device Letters · 2005 · 61 citations

Materials Science, Materials Engineering, Electrical Engineering +14