P. Majhi

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

P. D. Kirsch, P. Sivasubramani, Jimin Huang et al. · Applied Physics Letters · 2008 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Manuel Quevedo-López, H.C. Wen et al. · Applied Physics Letters · 2006 · 105 citations

Engineering, Materials Engineering, Materials Science +17

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

N. Goel, P. Majhi, Chi On Chui et al. · Applied Physics Letters · 2006 · 99 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/

Ching-Huang Lu, G. Wong, Michael Deal et al. · IEEE Electron Device Letters · 2005 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, N. Goel, P. Majhi et al. · Applied Physics Letters · 2008 · 72 citations

Engineering, Electrical Engineering, Materials Science +17