S. Koveshnikov - Concepedia

Author

S. Koveshnikov

University at Albany, State University of New York

Also Known As

Koveshnikov S. V., S Koveshnikov, S. KOVESHNIKOV, S. Koveshnikov, S. V. KOVESHNIKOV, S. V. Koveshnikov, S.V Koveshnikov, SERGEI KOVESHNIKOV, Sergei Koveshnikov, Sergei V Koveshnikov

124

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University at Albany, State University of New York Intel (United States)The University of Texas at Austin North Carolina State University Tashkent State Technical University named after Islam Karimov

About

S. Koveshnikov is an author at University at Albany, State University of New York specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	28	948
2	Applied Physics	17	27	937
3	Chemical Engineering	1	1	18
4	Computer Engineering	1	1	39
5	Computer Science	1	1	39

S. Koveshnikov

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Metal-oxide-semiconductor capacitors on GaAs with high-<i>k</i> gate oxide and amorphous silicon interface passivation layer S. Koveshnikov, Wilman Tsai, J. C. Lee, Applied Physics Letters EngineeringSilicon On InsulatorMetal-oxide-semiconductor CapacitorsSemiconductor DeviceFermi Level Pinning	2006	185
Impurity gettering to secondary defects created by MeV ion implantation in silicon Richard A. Brown, Oleg Kononchuk, G. A. Rozgonyi, Journal of Applied Physics Materials ScienceSemiconductorsIon ImplantationEngineeringDislocation Interaction	1998	78
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S. Oktyabrsky, Vadim Tokranov, Michail M. Yakimov, Materials Science and Engineering B Electrical EngineeringEngineeringApplied PhysicsSitu PassivationAmorphous Silicon	2006	75
In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm S. Koveshnikov, N. Goel, P. Majhi, Applied Physics Letters Thick Zro2EngineeringLow Frequency DispersionSemiconductor DeviceLow Gate Leakage	2008	72
Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics Ashkar Ali, Himanshu Madan, S. Koveshnikov, IEEE Transactions on Electron Devices SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesMosfets Made	2010	66
Large-scalable graphene oxide films with resistive switching for non-volatile memory applications Maria Brzhezinskaya, Olesya O. Kapitanova, O. V. Kononenko, Journal of Alloys and Compounds Materials ScienceGraphene NanomeshesGraphene Quantum DotEngineeringNanotechnology	2020	52
Silicon photovoltaic cells with clusters of nickel atoms S. A. Valiev, S. Koveshnikov, Elyor Saitov Applied Solar Energy	2016	43
Addressing the gate stack challenge for high mobility In<inf>x</inf>Ga<inf>1-x</inf>As channels for NFETs N. Goel, Dawei Heh, S. Koveshnikov, EngineeringEot ScalabilitySemiconductor DeviceQuantum EngineeringFemtocell	2008	39
Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer Injo Ok, Hyun Chan Kim, M. Zhang, Device ModelingSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	2006	31
Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Applied Physics Letters Electrical EngineeringEngineeringThin GermaniumDepletion-mode MosfetTan Gate Electrode	2006	26

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