S. Koveshnikov

Metal-oxide-semiconductor capacitors on GaAs with high-<i>k</i> gate oxide and amorphous silicon interface passivation layer

S. Koveshnikov, Wilman Tsai, J. C. Lee et al. · Applied Physics Letters · 2006 · 185 citations

Engineering, Silicon On Insulator, Metal-oxide-semiconductor Capacitors +17

Impurity gettering to secondary defects created by MeV ion implantation in silicon

Richard A. Brown, Oleg Kononchuk, G. A. Rozgonyi et al. · Journal of Applied Physics · 1998 · 78 citations

Materials Science, Semiconductors, Ion Implantation +15

High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon

S. Oktyabrsky, Vadim Tokranov, Michail M. Yakimov et al. · Materials Science and Engineering B · 2006 · 75 citations

Electrical Engineering, Engineering, Applied Physics +7

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, N. Goel, P. Majhi et al. · Applied Physics Letters · 2008 · 72 citations

Thick Zro2, Engineering, Low Frequency Dispersion +18

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

Ashkar Ali, Himanshu Madan, S. Koveshnikov et al. · IEEE Transactions on Electron Devices · 2010 · 66 citations

Semiconductors, Device Modeling, Electrical Engineering +15