Himanshu Madan

Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition

Himanshu Madan, Matthew Jerry, Alexej Pogrebnyakov et al. · ACS Nano · 2015 · 75 citations

Engineering, Imt Temperature, Phase Coexistence +18

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

Ashkar Ali, Himanshu Madan, S. Koveshnikov et al. · IEEE Transactions on Electron Devices · 2010 · 66 citations

Semiconductors, Device Modeling, Electrical Engineering +15

Demonstration of p-type In<inf>0.7</inf>Ga<inf>0.3</inf>As/GaAs<inf>0.35</inf>Sb<inf>0.65</inf> and n-type GaAs<inf>0.4</inf>Sb<inf>0.6</inf>/In<inf>0.65</inf>Ga<inf>0.35</inf>As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic

Rahul Pandey, Himanshu Madan, H. Liu et al. · 2015 · 47 citations

Semiconductors, P-type Tfet, Electrical Engineering +11

Demonstration of In<inf>0.9</inf>Ga<inf>0.1</inf>As/GaAs<inf>0.18</inf>Sb<inf>0.82</inf> near broken-gap tunnel FET with I<inf>ON</inf>=740μA/μm, G<inf>M</inf>=70μS/μm and gigahertz switching performance at V<inf>Ds</inf>=0.5V

R. Bijesh, H. Liu, Himanshu Madan et al. · 2013 · 43 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

26.5 Terahertz electrically triggered RF switch on epitaxial VO2-on-Sapphire (VOS) wafer

Himanshu Madan, Haitian Zhang, Matthew Jerry et al. · 2015 · 41 citations

Terahertz Technology, Engineering, Radio Frequency +19