R. Bijesh

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

D. K. Mohata, R. Bijesh, Salil Mujumdar et al. · 2011 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

D. K. Mohata, R. Bijesh, Yunhai Zhu et al. · 2012 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of In<inf>0.9</inf>Ga<inf>0.1</inf>As/GaAs<inf>0.18</inf>Sb<inf>0.82</inf> near broken-gap tunnel FET with I<inf>ON</inf>=740μA/μm, G<inf>M</inf>=70μS/μm and gigahertz switching performance at V<inf>Ds</inf>=0.5V

R. Bijesh, H. Liu, Himanshu Madan et al. · 2013 · 43 citations

Engineering, Electrical Engineering, Materials Science +13

Flicker noise characterization and analytical modeling of homo and hetero-junction III–V tunnel FETs

R. Bijesh, D. K. Mohata, H. Liu et al. · 2012 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Tunnel transistors for energy efficient computing

Suman Datta, R. Bijesh, H. Liu et al. · 2013 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +15