Wilman Tsai

Metal-oxide-semiconductor capacitors on GaAs with high-<i>k</i> gate oxide and amorphous silicon interface passivation layer

S. Koveshnikov, Wilman Tsai, J. C. Lee et al. · Applied Physics Letters · 2006 · 185 citations

Engineering, Silicon On Insulator, Metal-oxide-semiconductor Capacitors +17

Germanium n-type shallow junction activation dependences

Chi On Chui, Leonard Kulig, Jean M. Moran et al. · Applied Physics Letters · 2005 · 176 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

Marc Heyns, Wilman Tsai · MRS Bulletin · 2009 · 174 citations

Electrical Engineering, Engineering, Technology Scaling +6

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

T. D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Applied Physics Letters · 2008 · 126 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +8

Atomic layer deposition of hafnium oxide on germanium substrates

Annelies Delabie, Riikka L. Puurunen, Bert Brijs et al. · Journal of Applied Physics · 2005 · 101 citations

Engineering, Hfo2 Layers, Closed Hfo2 Layer +17