H. C. Chiu

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

T. D. Lin, H. C. Chiu, Pei-Ching Chang et al. · Applied Physics Letters · 2008 · 126 citations

Semiconductor Technology, Gate Dielectrics, Electrical Engineering +8

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Yen‐Chung Chang, H. C. Chiu, Y. J. Lee et al. · Applied Physics Letters · 2007 · 119 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +14

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Y. C. Chang, M. L. Huang, Yu‐Han Chang et al. · Microelectronic Engineering · 2011 · 94 citations

Materials Science, Electrical Characteristics, Electrical Engineering +10

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

H. C. Chiu, L. T. Tung, Yizhe Chang et al. · Applied Physics Letters · 2008 · 61 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +19

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11