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Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Materials ScienceElectrical CharacteristicsElectrical EngineeringAluminium NitrideEngineeringNanoelectronicsSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideAtomic-layer-deposited Al2o3Comparative Study