Y.J. Lee

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Y. C. Chang, M. L. Huang, Yu‐Han Chang et al. · Microelectronic Engineering · 2011 · 98 citations

Engineering, Materials Engineering, Materials Science +16

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

Wen-Hsin Chang, Chih‐Hao Lee, Pei-Ching Chang et al. · Journal of Crystal Growth · 2008 · 51 citations

Engineering, Materials Engineering, Materials Science +14

Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers

Li‐Kang Chu, R. L. Chu, T. D. Lin et al. · Solid-State Electronics · 2010 · 28 citations

Engineering, Materials Engineering, Materials Science +17

Intrinsic metal organic frameworks as electro-catalysts for water splitting

Bo‐Yu Han, Y.J. Lee, S. N. G. Chu et al. · Coordination Chemistry Reviews · 2025 · 22 citations

Natural Sciences, Chemistry, Materials Science +14

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

W.C. Lee, B. H. Chin, L. K. Chu et al. · Journal of Crystal Growth · 2008 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +10