L. K. Chu

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

Marc Heyns, A. Alian, Guy Brammertz et al. · 2011 · 60 citations

Wide-bandgap Semiconductor, Engineering, Vlsi Design +18

Ga 2 O 3 ( Gd 2 O 3 ) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

L. K. Chu, T. D. Lin, Mao Lin Huang et al. · Applied Physics Letters · 2009 · 33 citations

Materials Science, Semiconductors, Oxide Heterostructures +13

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

W.C. Lee, B. H. Chin, L. K. Chu et al. · Journal of Crystal Growth · 2008 · 19 citations

Materials Science, Engineering, Applied Physics +2

Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process

Chun-Min Fu, Y.H. Lin, W.C. Lee et al. · Microelectronic Engineering · 2015 · 16 citations

Electrical Engineering, Engineering, Electronic Engineering +5

Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric

Ping-Hung Tsai, L. K. Chu, Y.W. Chen et al. · Journal of Crystal Growth · 2007 · 12 citations

Electrical Engineering, Engineering, Depletion-mode Gaas-based Mosfet +2