Guy Brammertz - Concepedia

Author

Guy Brammertz

Also Known As

BRAMMERTZ, Guy, Brammertz, G., Brammertz, Guy, Buffière, M., Enzo J. Ribeiro, G Brammertz, G. Brammertz, G.B Brammertz, Guy Brammertz, N.A. Rivas

298

Publications

4.9K

Citations

H-Index

119

Concepts

All Affiliations

IMEC KU Leuven Hasselt University University of Antwerp Helmholtz-Zentrum Berlin für Materialien und Energie

About

Guy Brammertz is an author at IMEC specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	35	97	3.9K
2	Applied Physics	30	78	3.3K
3	Chemical Engineering	11	12	337
4	Health Sciences	4	4	90
5	Natural Sciences	4	4	112

Guy Brammertz

118

Publications

4.4K

Citations

H-Index

Page 1

	Year	Citations
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Koen Martens, Chi On Chui, Guy Brammertz, IEEE Transactions on Electron Devices Electrical EngineeringMos DevicesEngineeringInterface Trap DensityNanoelectronics	2008	361
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells Guy Brammertz, Marie Buffière, Souhaib Oueslati, Applied Physics Letters Materials ScienceIi-vi SemiconductorElectrical EngineeringEngineeringNanoelectronics	2013	215
Capacitance-voltage characterization of GaAs–Al2O3 interfaces Guy Brammertz, H. C. Lin, Koen Martens, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringInterface State DistributionEngineering	2008	113
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator H. C. Lin, Wei Wang, Guy Brammertz, Microelectronic Engineering Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsGate Insulator	2009	103
On the interface state density at In0.53Ga0.47As/oxide interfaces Guy Brammertz, H. C. Lin, Matty Caymax, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringConduction BandEngineeringSemiconductor Device	2009	102
High efficiency perovskite solar cells using a PCBM/ZnO double electron transport layer and a short air-aging step Weiming Qiu, Marie Buffière, Guy Brammertz, Organic Electronics Materials ScienceElectrical EngineeringEngineeringPerovskite Solar CellOrganic Solar Cell	2015	101
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures Guy Brammertz, Koen Martens, Sonja Sioncke, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2007	100
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors Guy Brammertz, A. Alian, Dennis Lin, IEEE Transactions on Electron Devices Device ModelingBorder Trap ModelElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	95
Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods Eileen O’Connor, Scott Monaghan, R. D. Long, Applied Physics Letters EngineeringAtomic LayerInterconnect (Integrated Circuits)Semiconductor DeviceSemiconductors	2009	94
High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning Roger Loo, G. Wang, Laurent Souriau, Journal of The Electrochemical Society	2009	86

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