H. C. Lin - Concepedia

Author

H. C. Lin

IMEC

Also Known As

H C Lin, H. C Lin, H. C. Lin, H.-C. Lin, H.C. Lin, H.C.D. Lin, H.c. Lin, Han-Chung Lin, Hanchung Lin, Hehui Lin

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

IMEC Purdue University West Lafayette KU Leuven ASM International ASM International (Belgium)

About

H. C. Lin is an author at IMEC specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	25	1.5K
2	Applied Physics	19	25	1.5K
3	Business	1	1	14
4	Education	1	1	14
5	Management	1	1	14

H. C. Lin

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs H. C. Lin, P. D. Ye, G. D. Wilk Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor DeviceEngineering	2005	240
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric Yi Xuan, Yanqing Wu, H. C. Lin, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	190
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric Yi Xuan, H. C. Lin, P. D. Ye, Applied Physics Letters SemiconductorsOxide HeterostructuresElectrical EngineeringHigh Temperature AnnealingEngineering	2006	142
Capacitance-voltage characterization of GaAs–Al2O3 interfaces Guy Brammertz, H. C. Lin, Koen Martens, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringInterface State DistributionEngineering	2008	113
Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator H. C. Lin, Wei Wang, Guy Brammertz, Microelectronic Engineering Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsGate Insulator	2009	103
On the interface state density at In0.53Ga0.47As/oxide interfaces Guy Brammertz, H. C. Lin, Matty Caymax, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringConduction BandEngineeringSemiconductor Device	2009	102
Electrical Properties of III-V/Oxide Interfaces Guy Brammertz, H. C. Lin, Koen Martens, ECS Transactions Wide-bandgap SemiconductorElectrical EngineeringInterface State DistributionEngineeringPhysics	2009	76
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors Tian‐Li Wu, Denis Marcon, Benoit Bakeroot, Applied Physics Letters Electrical EngineeringAc TransconductanceEngineeringSemiconductor DeviceNanoelectronics	2015	64
Capacitance–Voltage Characterization of GaAs–Oxide Interfaces Guy Brammertz, H. C. Lin, Koen Martens, Journal of The Electrochemical Society	2008	56
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric H. C. Lin, Tao Yang, Hasan Sharifi, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	2007	54

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