H. C. Lin

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

H. C. Lin, P. D. Ye, G. D. Wilk · Applied Physics Letters · 2005 · 240 citations

Materials Science, Semiconductors, Electrical Engineering +15

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

Yi Xuan, Yanqing Wu, H. C. Lin et al. · IEEE Electron Device Letters · 2007 · 190 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Yi Xuan, H. C. Lin, P. D. Ye et al. · Applied Physics Letters · 2006 · 142 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

Guy Brammertz, H. C. Lin, Koen Martens et al. · Applied Physics Letters · 2008 · 113 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

H. C. Lin, Wei Wang, Guy Brammertz et al. · Microelectronic Engineering · 2009 · 103 citations

Electrical Engineering, Engineering, Electronic Engineering +6