P. D. Ye

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Yi Xuan, H. C. Lin, P. D. Ye et al. · Applied Physics Letters · 2006 · 142 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

Jiangjiang Gu, Y. Q. Liu, Yanqing Wu et al. · 2011 · 98 citations · Full text

First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

Xiao Lyu, Mengwei Si, Pragya R. Shrestha et al. · 2019 · 91 citations

Engineering, Hafnium Zirconium Oxide, Multiferroics +16

Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

Yanqing Wu, Yi Xuan, Tian Shen et al. · Applied Physics Letters · 2007 · 77 citations

Materials Science, Semiconductors, Electrical Engineering +13

First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching

Yanqing Wu, R.S. Wang, Tian Shen et al. · 2009 · 66 citations

Electrical Engineering, Gate Length, Engineering +13