Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Abstract

Atomic layer deposition (ALD) Al2O3 is a high-quality gate dielectric on III-V compound semiconductor with low defect density, low gate leakage, and high thermal stability. The high-quality of Al2O3∕InGaAs interface surviving from high temperature annealing is verified by excellent capacitance-voltage (CV) curves showing sharp transition from depletion to accumulation with “zero” hysteresis, 1% frequency dispersion per decade at accumulation capacitance, and strong inversion at split CV measurement. An enhancement-mode n-channel InGaAs metal-oxide-semiconductor field-effect-transistor is also demonstrated by forming true inversion channel at Al2O3∕InGaAs interface.