G. D. Wilk - Concepedia

Author

G. D. Wilk

ASM International

Also Known As

G D Wilk, G Wilk, G. D. Wilk, G. Wilk, G.D. Wilk, Glen D. Wilk, Glen Wilk, Wilk, G., Wilk, Glen

101

Publications

12.9K

Citations

H-Index

Concepts

All Affiliations

ASM International Texas Instruments (United States)Purdue University West Lafayette Rutgers, The State University of New Jersey IMEC

About

G. D. Wilk is an author at ASM International specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	36	53	12.8K
2	Applied Physics	35	51	12.6K
3	Chemistry	5	5	726
4	Chemical Engineering	4	4	379
5	Natural Sciences	1	1	110

G. D. Wilk

Publications

12.8K

Citations

H-Index

Page 1

	Year	Citations
High-κ gate dielectrics: Current status and materials properties considerations G. D. Wilk, Robert M. Wallace, J. Anthony Journal of Applied Physics EngineeringBand GapSemiconductor DeviceSemiconductorsMaterials Science	2001	5.8K
Hafnium and zirconium silicates for advanced gate dielectrics G. D. Wilk, Robert M. Wallace, J. Anthony Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringElectronic Materials	2000	971
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon G. D. Wilk, Robert M. Wallace Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering	1999	503
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric P. D. Ye, Bingzheng Yang, K.K. Ng, Applied Physics Letters Electrical EngineeringAld Al2o3∕algan∕gan Mos-hemtEngineeringRf SemiconductorNanoelectronics	2005	494
Stable zirconium silicate gate dielectrics deposited directly on silicon G. D. Wilk, Robert M. Wallace Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsZirconium Silicate	2000	326
Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition Martin M. Frank, G. D. Wilk, D. Starodub, Applied Physics Letters EngineeringThermal TreatmentsSemiconductor DeviceMolecular Beam EpitaxyEpitaxial Growth	2005	312
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition P. D. Ye, G. D. Wilk, Bingzheng Yang, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2003	305
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers M. L. Green, M.-Y. Ho, B. Busch, Journal of Applied Physics Film NucleationEngineeringChemistrySilicon On InsulatorAtomic Layer	2002	278
Direct extraction of the electron tunneling effective mass in ultrathin SiO2 B. Brar, G. D. Wilk, Alan Seabaugh Applied Physics Letters EngineeringEffective MassSio2 Layer ThicknessUltrathin Sio2Silicon On Insulator	1996	273
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition P.D. Ye, G. D. Wilk, J. Kwo, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringAld ProcessEngineering	2003	245

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