K.K. Ng

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

P. D. Ye, Bingzheng Yang, K.K. Ng et al. · Applied Physics Letters · 2005 · 494 citations

Electrical Engineering, Ald Al2o3∕algan∕gan Mos-hemt, Engineering +11

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

P. D. Ye, G. D. Wilk, Bingzheng Yang et al. · Applied Physics Letters · 2003 · 305 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

P.D. Ye, G. D. Wilk, J. Kwo et al. · IEEE Electron Device Letters · 2003 · 245 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Effects of hot-carrier trapping in n- and p-channel MOSFET's

K.K. Ng, G.W. Taylor · IEEE Transactions on Electron Devices · 1983 · 172 citations

Electrical Engineering, Engineering, Hot-carrier Trapping +11

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

P. D. Ye, G. D. Wilk, Bingzheng Yang et al. · Applied Physics Letters · 2004 · 144 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +15