K.K. Ng - Concepedia

Author

K.K. Ng

AT&T (United States)

Also Known As

K K Ng, K Ng, K. K. Ng, K. Ng, K.K. Ng, KK Ng

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)ASM International Lehigh University Columbia University

About

K.K. Ng is an author at AT&T (United States) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	37	2.5K
2	Applied Physics	18	26	2.2K
3	Education	2	2	123
4	Natural Sciences	1	1	16
5	Chemical Engineering	1	1	29

K.K. Ng

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric P. D. Ye, Bingzheng Yang, K.K. Ng, Applied Physics Letters Electrical EngineeringAld Al2o3∕algan∕gan Mos-hemtEngineeringRf SemiconductorNanoelectronics	2005	494
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition P. D. Ye, G. D. Wilk, Bingzheng Yang, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2003	305
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition P.D. Ye, G. D. Wilk, J. Kwo, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringAld ProcessEngineering	2003	245
Effects of hot-carrier trapping in n- and p-channel MOSFET's K.K. Ng, G.W. Taylor IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHot-carrier TrappingPhysicsNanoelectronics	1983	172
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition P. D. Ye, G. D. Wilk, Bingzheng Yang, Applied Physics Letters Oxide HeterostructuresSemiconductorsElectrical EngineeringGaas ChannelEngineering	2004	144
Analysis of the gate-voltage-dependent series resistance of MOSFET's K.K. Ng, W.T. Lynch IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringChannel EndNanoelectronics	1986	140
Measuring the effective channel length of MOSFETs K.K. Ng, J.R. Brews IEEE Circuits and Devices Magazine Measurement TheoryEngineeringMeasurementMeasurement Standards (Educational Assessment)Accuracy And Precision	1990	105
Asymmetry in the SiO2 tunneling barriers to electrons and holes K.K. Ng, H.C. Card Journal of Applied Physics Materials ScienceElectrical EngineeringEngineeringTunneling MicroscopyPhysics	1980	101
On the calculation of specific contact resistivity on K.K. Ng, R. Liu IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	1990	76
Effects of grain boundaries on laser crystallized poly-Si MOSFET's K.K. Ng, G. K. Celler, E. I. Povilonis, IEEE Electron Device Letters Materials EngineeringMaterials ScienceElectrical EngineeringEffective Channel LengthGrain Boundaries	1981	76

Page 1