Applied Physics Letters · 2005 · 498 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBreakdown VoltageGallium Nitride (Gan) MaterialsGate Dielectric EngineeringGate DielectricsGate LeakageGate Leakage CurrentHeterojunction DevicesHigh-electron-mobility Transistors
We report on a GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using atomic-layer-deposited (ALD) Al2O3 as the gate dielectric. Compared to a conventional GaN high-electron-mobility-transistor (HEMT) of similar design, the MOS-HEMT exhibits several orders of magnitude lower gate leakage and several times higher breakdown voltage and channel current. This implies that the ALD Al2O3∕AlGaN interface is of high quality and the ALD Al2O3∕AlGaN∕GaN MOS-HEMT is of high potential for high-power rf applications. In addition, the high-quality ALD Al2O3 gate dielectric allows the effective two-dimensional (2D) electron mobility at the AlGaN∕GaN heterojunction to be measured under a high transverse field. The resulting effective 2D electron mobility is much higher than that typical of Si, GaAs or InGaAs metal-oxide-semiconductor field-effect-transistors (MOSFETs).
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AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations