Hideki Hasegawa

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Tamotsu Hashizume, Shinya Ootomo, Hideki Hasegawa · Applied Physics Letters · 2003 · 257 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Tamotsu Hashizume, Shinya Ootomo, Takanori Inagaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 226 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hideki Hasegawa, Takanori Inagaki, Shinya Ootomo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 224 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Leakage mechanism in GaN and AlGaN Schottky interfaces

Tamotsu Hashizume, Junji Kotani, Hideki Hasegawa · Applied Physics Letters · 2004 · 194 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Tamotsu Hashizume, Hideki Hasegawa · Applied Surface Science · 2004 · 185 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16