Tamotsu Hashizume

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Tamotsu Hashizume, Shinya Ootomo, Hideki Hasegawa · Applied Physics Letters · 2003 · 257 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Capacitance–Voltage Characteristics of Al₂O₃/AlGaN/GaN Structures and State Density Distribution at Al₂O₃/AlGaN Interface

Chihoko Mizue, Yujin Hori, Marcin Miczek et al. · Japanese Journal of Applied Physics · 2011 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Tamotsu Hashizume, Shinya Ootomo, Takanori Inagaki et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 226 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hideki Hasegawa, Takanori Inagaki, Shinya Ootomo et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 224 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Kazuhide Kumakura, Toshiki Makimōto, Nobuhiko P. Kobayashi et al. · Applied Physics Letters · 2005 · 224 citations · Full text

Engineering, Materials Engineering, Materials Science +17